Dually Electroactive Disulfide‐Confined Aryldiazonium Salt Used as a Linker Molecule for Preparing Immunosensor Platforms

A new electroactive disulfide‐confined aryl diazonium (DSAD) salt was synthesized and used as a linker for biomolecules immobilization to prepare two kinds of immunoassay platforms. DSAD was electrodeposited on ITO electrode surfaces by cyclic voltammetry. Disulfide group of DSAD attached on the surfaces were electrochemically oxidized into thiosulfinate or thiosulfonate groups. For the first work, a detection of rabbit antigen was performed on ITO microelectrodes array by spatially‐selective approach. In the second work, DSAD was deposited on electrochemically reduced graphene oxide‐modified ITO surfaces, which were used as a platform for electrochemical sandwich immunoassay for detecting mouse antigen.     

光机械式红外探测器中镜面弯曲对探测灵敏度的影响(英文)

光学读出式红外成像技术是近年来研究的热点,本文讨论了镜面弯曲对光学检测灵敏度的影响。由双材料微悬臂梁组成的非致冷焦平面阵列通过体刻蚀工艺加工而成,由于残余应力的影响,制成的焦平面阵列将会发生弯曲,应力导致的镜面弯曲将会降低光学探测灵敏度。本文通过傅立叶光学模拟了镜面弯曲对光学探测灵敏度的影响,并通过实验验证了该模型。实验和模拟结果表明,在镜面曲率为0 .1mm-1时,光学探测灵敏度将会降低到理想情况的40 %。最后我们用这个模型评价了通过表面修饰来提高光学性能的效果。     

ITO-free inverted organic solar cells fabricated with transparent and low resistance ZnO/Ag/ZnO multilayer electrode

Inverted organic solar cells (OSCs) based on poly (3-hexylthiophene) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) bulk heterojunctions (BHJ) were fabricated with optimized ZnO/Ag/ZnO multilayer and conventional indium–tin oxide (ITO) cathode electrodes and their performance was compared. The ZnO/Ag/ZnO multilayer films showed sheet resistances in the range 3.6–3.9 Ω/sq, while ITO exhibited 14.2 Ω/sq. On the one hand, the carrier concentration gradually decreased from 1.74 × 10²² to 4.33 × 10²¹ cm⁻³ as the ZnO thickness increased from 8 to 80 nm, respectively. The transmittance of the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) films was ∼95% at 550 nm, which is comparable to that of ITO (∼96%). The multilayer films were smooth with a root mean square (RMS) roughness of 0.81 nm. OSCs fabricated with the ZnO(40 nm)/Ag(19 nm)/ZnO(40 nm) film showed a power conversion efficiency (2.63%) comparable to that of OSCs with a conventional ITO cathode (2.71%).     

An alternative approach to investigate the origin of p-type conductivity in arsenic doped ZnO

P-type conductivity in MOCVD grown ZnO was obtained by directional thermal diffusion of arsenic from semi-insulating GaAs substrate. The films were single crystalline in nature and oriented along (002) direction. Ab initio calculations in the framework of density functional theory have been carried out with different chemical states of arsenic in ZnO. Present calculations suggested As_Zn–2V_Zn defect is a shallow acceptor and results in ferromagnetism in ZnO. The magnetic measurements of the samples indeed showed ferromagnetic ordering at room temperature. X-ray photoelectron spectra confirmed the presence of As_Zn and V_Zn. The core level chemical shift in binding energy of As_Zn indicated the formation of As_Zn–2V_Zn. Diffused arsenic substitutes zinc atom and creates additional zinc vacancies. The zinc vacancies, surrounding the oxygen atoms, result in unpaired O 2p electrons which in turn induce ferromagnetism in the samples.     

Patterned growth of zinc oxide nanorods using poly(vinyl alcohol)-N-methyl-4(4′-formylstyryl)pyridinium methosulfate acetal and zinc acetate mixture as a seed layer

This paper reports a new method for fabricating two-dimensional ZnO nanorod patterns. A water soluble mixture of poly(vinyl alcohol)-N-methyl-4(4′-formylstyryl)pyridinium methosulfate acetal (PVA-Sbq) and zinc acetate (ZnA) was used as a negative photoresist to produce the desired patterns using conventional photolithography. Hydrothermally-grown ZnO nanorods were grown selectively on the calcined PVA-Sbq/ZnA patterns. The appropriate concentration of PVA-Sbq and ZnA that can produce the desirable seed layer pattern was determined experimentally. Furthermore, the effects of the calcination time on the morphology and vertical alignment of ZnO nanorods were investigated. The vertically-aligned ZnO nanorods were generated by sufficient calcination of the patterned seed layer. On the other hand, the aspect ratio of ZnO nanorods decreased slightly with increasing calcination time. This new approach provides a simple and cost-effective method for fabricating ZnO nanorod patterns which can be beneficial in various solid-state devices and optoelectronic applications.     

Novel interconnection scheme for thin‐film silicon solar modules with conductive intermediate reflector

Intermediate reflector layers are commonly used for light man‐agement purposes in multi‐junction silicon based devices containing a‐Si:H top‐ and µc‐Si:H bottom‐sub‐cells. A low resistance of such layers can have a severe impact on the solar module performance due to shunting of the bottom sub‐cell by the P2 scribe. A common solution for this problem is the use of an additional scribe line. However, not only the additional processing step is disadvantageous but also the dead area losses are increased as well by the additional scribe. This work introduces a novel solar cell stripe interconnection scheme that requires only three scribing processes with similar dead area losses as they would be apparent in the standard interconnection scheme. An implementation to mini modules shows no negative impact on the electrical properties and simultaneously reducing the required number of scribing steps. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Orientations of ZnO grown on GaN

On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the ‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

纳米金刚石掺混纳米氧化锌的场发射特性

利用水热法制备了菊花状的氧化锌纳米棒,并进行表征,将纳米氧化锌掺入纳米金刚石中配制成电泳液,超声分散后电泳沉积到钛衬底上,再经热处理后进行场发射特性的测试.结果表明:未掺混的金刚石阴极样品的开启电场为7.3V/μm,在20V/μm的电场下,场发射电流密度为81μA/cm2;掺混后阴极样品的场发射开启电场降低到4.7~6.0V/μm,在20V/μm电场下,场发射电流密度提高到140~158μA/cm2.原因是纳米ZnO掺入后,增强了涂层的电子输运能力、增加了有效发射体数目,提高了场增强因子β,而金刚石保证了热处理后涂层与衬底的良好键合,形成了欧姆接触,降低了场发射电流的热效应.场发射电流的稳定性随掺混ZnO量的增加而下降,要兼顾场发射电流密度及其稳定性,适量掺入ZnO可有效提高纳米金刚石的场发射性能.     

基于光楔阵列产生光学涡旋阵列的研究

在研究光楔衍射法产生单涡旋的基础上,基于长条形光楔阵列,提出了利用光束阵列衍射产生涡旋阵列的方法.该方法要求光束阵列在平行于光楔边缘方向上的光束间距等于光束直径的整数倍.利用超精密机床采用一体化加工法加工了光楔阵列元件,验证了该方法的可行性.利用空间光调制器快速灵活调整光束阵列的优点,搭建了借助空间光调制器加载达曼光栅衍射产生所需光束阵列的实验光学系统.针对光束阵列与光楔阵列的匹配问题,研究了达曼光栅掩模图基本单元对光束阵列的调控,获得了可调结构的光束阵列.实验产生了拓扑荷一致的光学涡旋阵列,与仿真结果相一致,证明所提方法的有效性.     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.